51651. The ac resistance of a diode is the ________ of the characteristic curve at the Q-point of operation.
51652. The potential at which the characteristics curve vertical rise occurs is commonly referred to as the ________.
51653. The reverse saturation current Is will just ________ in magnitude for every 10° C increase in temperature.
51654. The intensity of LED is greatest at ________ degrees and the least at ________ degrees.
51655. Introducing those impurity elements that have ________ valence electrons creates the n-type material.
51656. The reverse-bias current ________ with the increase of temperature.
51657. The test current in a Zener diode IZT is the current defined by the ________ power level.
51658. The temperature coefficient can be ________ for different Zener levels.
51659. The diffused impurities with ________ valence electrons are called acceptor atoms.
51660. A(n) ________ is the simplest of semiconductor devices.
51661. The reverse-saturation current level is typically measured in ________.
51662. The depletion width ________ in the forward bias, which results in having a majority flow across the junction.
51663. One eV is equal to ________ J.
51664. The diode ________.
51665. It is not uncommon for a germanium diode with an Is in the order of 1–2 A at 25°C to have leakage current of 0.1 mA at a temperature of 100°C.
51666. What does a high resistance reading in both forward- and reverse-bias directions indicate?
51667. Which capacitance dominates in the reverse-bias region?
51668. The movement of free electrons in a conductor is called
51669. For a forward-biased diode, the barrier potential ________ as temperature increases.
51670. The wide end arrow on a schematic indicates the ________ of a diode.
51671. An n-type semiconductor material
51672. For a forward-biased diode, as temperature is ________, the forward current ________ for a given value of forward voltage.
51673. Which statement best describes an insulator?
51674. Effectively, how many valence electrons are there in each atom within a silicon crystal?
51675. The boundary between p-type material and n-type material is called
51676. You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be
51677. An ideal diode presents a(n) ________ when reversed-biased and a(n) ________ when forward-biased.
51678. A reverse-biased diode has the ________ connected to the positive side of the source, and the ________ connected to the negative side of the source.
51679. What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?
51680. What factor(s) do(es) the barrier potential of a pn junction depend on?
51681. An atom is made up of
51682. Reverse breakdown is a condition in which a diode
51683. There is a small amount of current across the barrier of a reverse-biased diode. This current is called
51684. As the forward current through a silicon diode increases, the voltage across the diode
51685. Doping of a semiconductor material means
51686. The forward voltage across a conducting silicon diode is about
51687. The most common type of diode failure is a(n) ________.
51688. What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?
51689. The maximum number of electrons in each shell of an atom is
51690. A silicon diode is forward-biased. You measure the voltage to ground from the anode at ________, and the voltage from the cathode to ground at ________.
51691. The term bias in electronics usually means
51692. A reverse-biased silicon diode has about 0.7 V across it.
51693. An atom is the smallest particle of an element that retains the characteristics of that element.
51694. An intrinsic semiconductor is neither a good conductor nor a good insulator.
51695. The ideal model of a diode is a switch.
51696. A pn structure is called a diode.
51697. Forward bias is the condition that allows current through a pn junction.
51698. An intrinsic crystal is one that contains a small amount of impurities.
51699. N-type semiconductor material has very few free electrons.
51700. The silicon material used in semiconductors is extremely pure with no additives.