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You Are On Multi Choice Question Bank SET 1037

51851. The base bias circuit is not beta-dependent.



51852. Collector-feedback bias is another name for base bias.



51853. The input resistance at the base of a transistor is RIN DCIBRE.



51854. Clipping is the result of





51855. Which transistor bias circuit arrangement provides good stability using negative feedback from collector to base?





51856. Refer to the given figure. The most probable cause of trouble, if any, from these voltage measurements is





51857. The first state in South India to introduce Panchayat Raj?





51858. What is the dc input resistance at the base of a BJT?





51859. What is the maximum temperature limit for liquid-crystal displays (LCDs)?





51860. Which of the following diodes is limited to the reverse-bias region in its region of operation?





51861. The majority of power diodes are constructed using ________.





51862. Which of the following is (are) diodes?





51863. What is the limit of peak current IP in tunnel diodes?





51864. What is the response time of LCDs?





51865. What is the typical level of change in resistance per degree change in temperature?





51866. What is the maximum peak voltage for tunnel diodes?





51867. This is an equivalent circuit for the ________ diode.




51868. Which of the following semiconductor materials is (are) used for manufacturing solar cells?





51869. Which of the following semiconductor materials is (are) used in the manufacturing of tunnel diodes?





51870. What is the power density received from the sun at sea level?





51871. The varicap diode has a transition capacitance sensitive to the applied reverse-bias potential that is a maximum at zero volts and decreases ________ with increasing reverse-bias potentials.




51872. For a 50-A unit, the PIV of the Schottky is about ________ compared to 150 V for the p-n junction variety.





51873. What metal(s) is(are) used in the construction of Schottky diodes?






51874. Which of the following metals is (are) used in the fabrication of Schottky diodes?





51875. What is the resistance of thermistors at boiling temperature (100ºC)?





51876. Which of the following areas is (are) applications of varactor diodes?





51877. This is an approximate equivalent circuit for the ________ diode.




51878. Which of the following materials is (are) used in the manufacturing of thermistors?





51879. What is the ratio IP / IV for gallium arsenide?





51880. What is the response time of light-emitting diodes (LEDs)?





51881. What type of temperature coefficient do thermistors have?





51882. Which of the following diodes has a negative-resistance region?





51883. The tuning diode is a ________-dependent, variable ________.





51884. What is the resistance of thermistors at room temperature (20ºC)?





51885. What is the response time of cadmium sulfide (CdS) in photoconductive cells?





51886. The PIV rating of power diodes can be increased by stacking the diodes in series.



51887. What are the typical ranges of reverse-bias current levels IS for low-power and high-power Schottky diodes at room temperature?





51888. The current capability of power diodes can be increased by placing two or more in series.



51889. In photodiodes, an increase in light intensity ________ the reverse current.





51890. The p-n junction of a tunnel diode is doped at a level from ________ to ________ times that of a typical semiconductor diode.





51891. In general, silicon ________.





51892. The response time for cadmium selenide (CdSe) is ________.





51893. Schottky diodes have ________.





51894. In both n-type and p-type silicon materials, the ________ is the majority carrier in a Schottky diode.





51895. A decrease in illumination ________ the resistance R of a photoconductive cell.





51896. In the reverse-bias region of varactor diodes, the resistance RR in parallel with the varying capacitor is ________ and the series resistance RS is ________.





51897. A Schottky diode has ________ level of current at the same applied bias compared to that of the p-n junction at both the forward- and reverse-bias regions.





51898. Schottky diode construction results in a ________ uniform junction region and a ________ level of ruggedness.





51899. The current capability of power diodes can be increased by placing two or more of the diodes in ________, and the PIV rating can be increased by stacking the diodes in ________.





51900. In the negative-resistance region of tunnel diodes, as the terminal voltage increases, the diode current ________.





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