electronics-semiconductor-memory Related Question Answers

1. Select the best description of read-only memory (ROM).





2. Advantage(s) of an EEPROM over an EPROM is (are):





3. Which of the following RAM timing parameters determine(s) its operating speed?





4. Memory that loses its contents when power is lost is:





5. Select the best description of the fusible-link PROM.





6. A nonvolatile type of memory that can be programmed and erased in sectors, rather than one byte at a time is:





7. An SRAM storage cell is less complex than a DRAM storage cell.



8. The key advantage of the EPROM is its ability to erase only a single byte of stored data.



9. Memory configuration refers to the organization of storage bits within a memory.



10. ROM stands for read-only memory.



11. To avoid data loss, SRAM must be refreshed every few milliseconds.



12. When a binary word is stored in a memory location of a ROM, the process is called burning in.



13. Storage density is a term used to compare the memory storage ability of one device to that of another.



14. A memory map is an address-listing diagram that shows the boundaries of the address space.



15. The number that is a unique representation of the location of data is its address.



16. PROMs are volatile.



17. The binary data stored in an EEPROM is___________.





18. The data stored in a Mask ROM (MROM) is ___________.





19. A technique of addressing storage cells on a dynamic RAM that sequentially uses the same inputs for the row and column addresses of the cell is called________.





20. Refreshing DRAM typically must occur every ________.





21. The time interval between the memory receiving a new address input and the data being available is called _________.





22. In general, _________ are used when a small amount of read/write is required.





23. The process of entering data into the ROM is called ___________.





24. To reduce the number of pins on the IC package, manufacturers often use ___________.





25. The periodic recharging of DRAM memory cells is called ___________.





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