1. Assertion (A): The reverse current in a p-n junction is nearly constant. Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.





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MCQ->Assertion (A): The reverse current in a p-n junction is nearly constant. Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.

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MCQ->Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value. Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.

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MCQ->The reverse breakdown voltage of a diode depends on the extent of doping.....
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MCQ->Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

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