electronics-and-communication-engineering-electronic-devices-and-circuits Related Question Answers

51. In all metals





52. The voltage across a zener diode





53. Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response. Reason (R): The electron mobility is higher than hole mobility.





54. The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of





55. Which of these has degenerate p and n materials?





56. A Schottky diode clamp is used along with switching BJT for





57. From the given circuit below, we can conclude that.





58. In a piezoelectric crystal, applications of a mechanical stress would produce





59. In which of the following is the width of junction barrier very small?





60. If the reverse voltage across a p-n junction is increased three times, the junction capacitance





61. Which of these has highly doped p and n region?





62. Measurement of Hall coefficient enables the determination of





63. The units for transconductance are





64. The amount of photoelectric emission current depends on the frequency of incident light.



65. When a p-n junction is forward biased





66. The carriers of n channel JFET are





67. The depletion layer around p-n junction in JFET consists of





68. Junction temperature is always the same as room temperature.



69. The mean free path of conduction electrons in copper is about 4 x 10-8 m. For a copper block, find the electric field which can give, on an average, 1 eV energy to a conduction electron





70. When a p-n-p transistor is properly biased to operate in active region the holes from emitter.





71. Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices. Reason (R): Forbidden gap in silicon is more than that in germanium.





72. Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode. Reason (R): When a diode is reverse biased surface leakage current flows.





73. At room temperature a semiconductor material is





74. The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs → versus





75. In an n channel JFET





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