151. In a P type silicon sample, the hole concentration is 2.25 x 1015 / cm3. If the intrinsic carrier concentration is 1.5 x 1010/ cm3 the electron concentration is
152. The behaviour of a JFET is similar to that of
153. What is the effect of cut in voltage on the wave form of output as compared to input in a semiconductor diode?
154. As temperature increases the number of free electrons and holes in an intrinsic semiconductor
155. At room temperature kT = 0.03 eV.
156. Assertion (A): A JFET behaves as a resistor when VGS < VP. Reason (R): When VGS < VP, the drain current in a JFET is almost constant.
157. In a reverse biased P-N junction, the current through the junction increases abruptly at
158. Dielectric strength of polythene is around
159. Resistivity of hard drawn copper is
160. The channel of JFET consists of
161. In a bipolar junction transistor a dc = 0.98, ICO= 2 μA and 1B = 15 μA. The collector current IC is
162. The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be
163. Assertion (A): The forward resistance of a p-n diode is not constant. Reason (R): The v-i characteristics of p-n diode is non-linear.
164. For a photoengraving the mask used is
165. In a varactor diode the increase in width of depletion layer results in
166. In given figure a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes approximately equal to
167. The work function of a photo surface whose threshold wave length is 1200 A, will be
168. The diameter of an atom is
169. N-type silicon is obtained by doping silicon with
170. When a p-n junction is reverse biased
171. If a sample of germanium and a sample of Si have the impurity density and are kept at room temperature then
172. When a large number of atoms are brought together to form a crystal
173. Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of 4.2 V if C(0) = 80 pf and VT = 0.7 V
174. At room temperature the barrier potential in a silicon diode is
175. The cut in voltage of a diode is nearly equal to