202. The current through a PN Junction diode with v volts applied to the P region to the N region, where (I0 is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is
203. The ratio of diffusion constant for hole DP to the mobility for holes is proportional to
204. The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300k will be (in m2/s).
205. During induction heating of metals which of the following is abnormally high?
206. Assertion (A): Alkali metals are used as emitters in phototubes. Reason (R): Alkali metals have low work functions.
207. The output v-i characteristics of enhancement type MOSFET has
208. In a full wave rectifier, the current in each of the diodes flows for
209. In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that
210. The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly
211. When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.
212. Which rectifier has the best ratio of rectification?
213. Assertion (A): A p-n junction is used as rectifier. Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.
214. In an integrated circuit the SiO2 layers provide
215. For a n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by
216. Which of the following are voltage controlled devices?
217. Which of the following is known as insulated gate FET?
218. Assertion (A): The hybrid p model of a transistor can be reduced to h parameter model and vice versa. Reason (R): Hybrid p and h parameter models are interrelated as both of them describe the same device.
219. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?
220. An insulator will conduct when the
221. Zener breakdown occurs
222. The maximum power handling capacity of a resistor depends on
223. Epitaxial growth is used in ICs
224. The mean life time of carrier may range from 10-9 seconds to hundreds of μ-seconds.
225. In which mode of BJT operation are both junctions forward biased?