176. Assertion (A): In a BJT base current is very small. Reason (R): In a BJT recombination in base region is high.
177. A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion layer is
178. As temperature increases the forbidden gap in silicon increases.
179. Assertion (A): Germanium is more commonly used than silicon. Reason (R): Forbidden gap in germanium is less than that in silicon.
180. Which of the following devices has substrate?
181. Assertion (A): The amount of photoelectric emission depends on the intensity of incident light. Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.
182. In degenerate p type semiconductor material, the Fermi level,
183. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases. Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.
184. As comparated to an ordinary p-n diode, the extent of impurity atoms in a tunnel diode
185. In active filter circuits, inductances are avoided mainly because they
186. When a p-n-p transistor is operating in active region, the current in the n region is due to
187. In a JFET
188. Consider the following statements: The function of oxide layer in an IC device is to mask against diffusion or non implantinsulate the surface electricallyincrease the melting point of siliconproduce a chemically stable protective layer Of these statements:
189. An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity atoms. The number of electrons and holes is
190. In a reverse biased p-n junction, the reverse bias is 4V. The junction capacitance is about
191. Photoconductive devices uses
192. Assertion (A): Oxide coated cathodes are very commonly used. Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure tungsten.
193. A JFET operates in ohmic region when
194. In CE connection, the leakage current of a transistor is about
195. The early effect in a BJT is caused by
196. Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly constant. Reason (R): Base current in CE connection is very small.
197. The temperature of cathode is increased from 2500K to 2600K. The increase in thermionic emission current is about
198. Consider the following statement: At finite temperature, magnetic dipoles in a material are randomly oriented giving low magnetization. When magnetic field H is applied, the magnetization? Increases with HDecreases with HDecreases with temp for constant H Which of the statement given above is/are correct?
199. Ferrites have
200. Eg is the band gap, A is pre-factor, k is Boltzmann constant? Which one of the following is the remaining grade of paper used in paper capacitor, besides the other two grade of paper-low and extra low loss?