1. The silicon-controlled rectifier (SCR) is a three-layer device consisting of a gate, an anode, and a cathode.



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  • By: guest on 01 Jun 2017 11.42 pm
    A silicon-controlled rectifier (or semiconductor-controlled rectifier) is a four-layer solid state device that controls current. The name "silicon controlled rectifier" or SCR is General Electric's trade name for a type of thyristor. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.
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MCQ->The silicon-controlled rectifier (SCR) is a three-layer device consisting of a gate, an anode, and a cathode.....
MCQ->Assertion (A): When the anode current of an SCR starts increasing during turn on process, the anode cathode voltage drop starts decreasing. Reason (R): During turn on the reverse biased junction in SCR breaksdown.

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MCQ->Consider the following rectifier circuits : half-wave rectifier without filterfull-wave rectifier without filterfull-wave rectifier with series inductance filterfull-wave rectifier with capacitance filter. The sequence of these rectifier circuits in decreasing order of their ripple factor is....
MCQ->Assertion (A): A half wave controlled rectifier has poorer efficiency and higher ripple factor than a full wave controlled rectifier.Reason (R): The use of a freewheeling diode in half wave controlled rectifier circuit improves the waveform of load current and circuit power factor.

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MCQ->SCR can be turned on by applying anode voltage at a sufficient fast rateapplying sufficiently large anode voltageincreasing the temperature of SCR to a sufficientlyapplying sufficiently large gate current.....
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