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1. A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .





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  • By: guest on 02 Jun 2017 12.54 am
    VT(new) = VT(odd) + = 6.903 x 10-8 ∴ ∴ fB = - 8.6 x 1011 The threshold voltage is always negative for p-channel and hence implant is of p-type.
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