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1. Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon





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  • By: guest on 02 Jun 2017 12.55 am
    Use EF - Ev = Since it is doped with acceptor impurity, Fermi level will shift down.
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