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electronics and communication engineering electronic devices and circuits
1. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that
(A): equal number of electron-hole pairs will be generated in both at higher temperatures
(B): equal number of electron-hole pairs will be generated in both at lower temperatures
(C): less number of electron hole pairs will be generated in silicon than in germanium at room temperature
(D): more number of electron-hole pairs will be generated in silicon than in germanium at room temperature
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