1. A n-type silicon sample contains a donor concentration of Nd = 2 x 1016 cm-3. The minority carrier hole lifetime is t p0 = 5 μs. The thermal equilibrium generation rate of hole is:





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  • By: guest on 02 Jun 2017 12.56 am
    Then thermal generation rate = 2.25 x 109 cm3 S-1 .
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