51051. In a curve tracer, the ________ reveals the distance between the VGS curves for the n-channel device.
51052. The specification sheet provides ________ to calculate the value of k for enhancement-type MOSFETs.
51053. In an FET circuit, ________ is normally the parameter to be determined first.
51054. In an FET transistor, the depletion region is ________ near the top of both p-type materials.
51055. The ________ transistor has become one of the most important devices used in the design and construction of integrated circuits for digital computers.
51056. The silicon dioxide (SiO2) layer used in a MOSFET is ________.
51057. VMOS FETs have a ________ temperature coefficient that will combat the possibility of thermal runaway.
51058. The enhancement-type MOSFET is in the cutoff region if ________.
51059. A(n) ________ can be used to check the condition of an FET.
51060. ________ has high input impedance, fast switching speeds, and lower operating power levels.
51061. The primary difference between the construction of depletion-type and enhancement-type MOSFETs is ________.
51062. The region to the right of the pinch-off locus is commonly referred to as the ________ region.
51063. The primary difference between the construction of a MOSFET and an FET is the ________.
51064. The FET is a ________ device depending solely on either electron (n-channel) or hole (p-channel) conduction.
51065. In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region.
51066. The active region of an FET is bounded by ________.
51067. The level of ________ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage VT.
51068. A junction field-effect transistor (JFET) is a ________ device.
51069. As VGS becomes ________ negative, the slope of each curve in the characteristics becomes ________ horizontal corresponding with an increasing resistance level.
51070. In an n-channel enhancement-type MOSFET with a fixed value of VT, the ________ the level of VGS, the ________ the saturation level for VDS.
51071. The FET resistance in the ohmic region is ________ at VP and ________ at the origin.
51072. In the n-channel transistor, the drain and source are connected to the ________ channel while the gate is connected to the two layers of ________ material.
51073. The transfer curve can be obtained by ________.
51074. Which of the following ratings appear(s) in the specification sheet for an FET?
51075. What is the level of drain current ID for gate-to-source voltages VGS less than (more negative than) the pinch-off level?
51076. What is the level of IG in an FET?
51077. What is the range of an FET's input impedance?
51078. Which of the following applies to a safe MOSFET handling?
51079. Refer to the given figure. ID = 6 mA. Calculate the value of VDS.
51080. What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate with?
51081. Midpoint bias for a D-MOSFET is ID = ________, obtained by setting VGS = 0.
51082. On the drain characteristic curve of a JFET for VGS = 0, the pinch-off voltage is
51083. This juice is made ......... fresh oranges.?
51084. Refer to figure given below. Determine the value of VGS.
51085. Which of the following devices has the highest input resistance?
51086. The value of VGS that makes ID approximately zero is the
51087. The JFET is always operated with the gate-source pn junction ________ -biased.
51088. Identify the p-channel D-MOSFET.
51089. All MOSFETs are subject to damage from electrostatic discharge (ESD).
51090. Identify the n-channel D-MOSFET.
51091. A dual-gated MOSFET is
51092. Refer to figure show below. Calculate the value of VD.
51093. What three areas are the drain characteristics of a JFET (VGS = 0) divided into?
51094. In a self-biased JFET circuit, if VD = VDD then ID = ________.
51095. The resistance of a JFET biased in the ohmic region is controlled by
51096. High input resistance for a JFET is due to
51097. For a JFET, the change in drain current for a given change in gate-to-source voltage, with the drain-to-source voltage constant, is
51098. Identify the p-channel E-MOSFET.
51099. Refer to figure shown below. What is the value of IG?
51100. A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V.