1. The depletion width ________ in the forward bias, which results in having a majority flow across the junction.





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MCQ->Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 μm Depletion width on the p-side = 1.0 μm Intrinsic carrier concentration = 1.4 x 1014F. cm-1. Thermal voltage = 26mV Permittivity of free space = 8.85 x 10-14F. cm-1. Dielectric constant of silicon = 12. The peak electric field in the device is....
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