Question Set

1. Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 μm Depletion width on the p-side = 1.0 μm Intrinsic carrier concentration = 1.4 x 1014F. cm-1. Thermal voltage = 26mV Permittivity of free space = 8.85 x 10-14F. cm-1. Dielectric constant of silicon = 12. The peak electric field in the device is





Ask Your Doubts Here

Type in
(Press Ctrl+g to toggle between English and the chosen language)

Comments

Show Similar Question And Answers
QA->Read the statements carefully and answer the question which follow: A cube has six sides each of a different colour.The red side is opposite black.The green side is between red and black.The blue side is adjacent to white .The brown side is adjacent to blue.The red side is face down.The side opposite brown is:....
QA->The device used for converting current from a lower voltage to a higher voltage is known as?....
QA->An intrinsic semiconductor undergoes doping, change into?....
QA->The process by which water diffuses through a semi-permeable membrane from a region of higher concentration of a solution to a region of lower concentration of a solution?....
QA->The movement of particles or molecules of a substance from the region of higher concentration to a region of lower concentration is called ........?....
MCQ->Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 μm Depletion width on the p-side = 1.0 μm Intrinsic carrier concentration = 1.4 x 1014F. cm-1. Thermal voltage = 26mV Permittivity of free space = 8.85 x 10-14F. cm-1. Dielectric constant of silicon = 12. The peak electric field in the device is....
MCQ->A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is....
MCQ->Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon....
MCQ->Consider the following statements: In a microstrip line Wavelength , where eff is the effective dielectric constant and 1 is the free space wavelength.Electromagnetic fields exist partly in the air above the dielectric substrate and partly within the substrate itself.The effective dielectric constant is greater than the dielectric constant of the air.Conductor losses increase with decreasing characteristic impedance. Which of the above statements is/are correct?....
MCQ->The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T = 300 K, electronic charge = 1.6 x 10-19C, thermal voltage = 26mV and electron mobility = 1350 cm2/V-s The magnitude of the electric field at x = 0.5 μm is....
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution