1. An one sided abrupt junction has 1021/m3 of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10-19 C, εr =16, ε0 = 8.87 x 10-12 F/m) is





Ask Your Doubts Here

Type in
(Press Ctrl+g to toggle between English and the chosen language)

Comments

  • By: guest on 02 Jun 2017 12.51 am
    .
Show Similar Question And Answers
QA->Read the statements carefully and answer the question which follow: A cube has six sides each of a different colour.The red side is opposite black.The green side is between red and black.The blue side is adjacent to white .The brown side is adjacent to blue.The red side is face down.The side opposite brown is:....
QA->The device used for converting current from a lower voltage to a higher voltage is known as?....
QA->“One caste, One religion and One God for man of the same blood and form, there is no difference animals of the same caste alone procreate Viewed thus all humanity belong to one caste”- In which book of Sree Narayana Guru these words can be seen?....
QA->Giridharlal’s family consists of his wife Radha. 3 sons and 2 daughters. One daughter is yet to be married and the other daughter has a son. Two sons have 2 children each and the third son has 3 children. An old aunt and sonin-law also stay with them. How many members are there in Giridharlal’s family ?....
QA->Who exhorted the world famous dictum "One caste, One religion, One clan, One world, One God"?....
MCQ->An one sided abrupt junction has 1021/m3 of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10-19 C, εr =16, ε0 = 8.87 x 10-12 F/m) is....
MCQ->A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is....
MCQ->Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 μm Depletion width on the p-side = 1.0 μm Intrinsic carrier concentration = 1.4 x 1014F. cm-1. Thermal voltage = 26mV Permittivity of free space = 8.85 x 10-14F. cm-1. Dielectric constant of silicon = 12. The peak electric field in the device is....
MCQ->Which of the following conditions must be satisfied for a transistor to remain under saturation? Its collector to base junction should be under forward bias.Its collector to base junction should be under reverse bias.Its emitter to base junction should be under reverse bias.Its emitter to base junction should be under forward bias. Select the correct answer from the codes given below:....
MCQ->Assertion (A): An unbiased p-n junction develops a built-in potential at the junction with the n-side positive and the p-side negative.Reason (R): The p-n junction behaves as a battery and supplies current to a resistance connected across its terminals.

....
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution