The depletion layer around p-n junction in JFET consists of ?->(Show Answer!)

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1. The depletion layer around p-n junction in JFET consists of

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MCQ->The depletion layer around p-n junction in JFET consists of....

MCQ->Assertion (A): A p-n junction has high resistance in reverse direction. Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

MCQ->Which of the following conditions must be satisfied for a transistor to remain under saturation? Its collector to base junction should be under forward bias.Its collector to base junction should be under reverse bias.Its emitter to base junction should be under reverse bias.Its emitter to base junction should be under forward bias. Select the correct answer from the codes given below:....

MCQ->A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is....

MCQ->Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 μm Depletion width on the p-side = 1.0 μm Intrinsic carrier concentration = 1.4 x 1014F. cm-1. Thermal voltage = 26mV Permittivity of free space = 8.85 x 10-14F. cm-1. Dielectric constant of silicon = 12. The peak electric field in the device is....

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