1. Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10-8 amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.





Ask Your Doubts Here

Type in
(Press Ctrl+g to toggle between English and the chosen language)

Comments

  • By: guest on 02 Jun 2017 12.51 am
    According to figure, D2 is forward bias, D1 is reverse biased. Reverse saturation current I0 = 10-8A. in clockwise direction. For Diode D2 Is = I0 Here Is = I0 eqv2/kT = 2 or ev2/0.026 = 2 V2 = 0.018 V Drop across D1 = V1 = 5 - 0.018 4.98 V By KVL in mesh, VD1 = -4.98 V, VD2 = 0.018 V.
Show Similar Question And Answers
QA->The device used for converting current from a lower voltage to a higher voltage is known as?....
QA->A man who can swim 48 m/minute in still water. He swims 200 m against the current and 200 m with the current. If the difference between those two times is 10 minutes, what is the speed of the current?....
QA->A man who can swim 48 m/minute in still water. He swims 200 m against the current and 200 m with the current. If the difference between those two times is 10 minutes, what is the speed of the current?....
QA->If a U-238 nucleus splits into two identical parts; how will the two nuclei be so produced?....
QA->If a U-238 nucleus splits into two identical parts, how will the two nuclei be so produced?....
MCQ->Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10-8 amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V. ....
MCQ->Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode? It has low saturation current.It has high value of cut in voltage.It can withstand large reverse voltage.When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions. Select the answer using the given below....
MCQ->Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value. Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.

....
MCQ->Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

....
MCQ->Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C. Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

....
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution