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1. Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.





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MCQ->Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

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MCQ->Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value. Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.

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MCQ->Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode? It has low saturation current.It has high value of cut in voltage.It can withstand large reverse voltage.When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions. Select the answer using the given below....
MCQ->Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C. Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

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MCQ->Assertion (A): Silicon is less sensitive to changes in temperature than germanium.Reason (R): Cut in voltage in silicon is less than that in germanium.

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