Question Set

1. Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.





Ask Your Doubts Here

Type in
(Press Ctrl+g to toggle between English and the chosen language)

Comments

Show Similar Question And Answers
QA->In Kiran’s opinion, his weight is greater than 65 kg but less than 72 kg. His brother does not agree with Kiran and he thinks that Kiran’s weight is greater than 60 kg but less than 70 kg. His mother’s view is that his weight cannot be greater than 68 kg. If all are them are correct in their estimation, what is the average of different probable weights of Kiran?....
QA->The device used for converting current from a lower voltage to a higher voltage is known as?....
QA->R is taller than X, but shorter than Z, Q is taller than Z, Y is taller than X, but shorter than R, Who is the shortest?....
QA->Speed of a swimmer when moving in the direction perpendicular to the direction of the current is 16 km/h, speed of the current is 3 km/h. So the speed of the swimmer against the current will be (in km/h):....
QA->A man who can swim 48 m/minute in still water. He swims 200 m against the current and 200 m with the current. If the difference between those two times is 10 minutes, what is the speed of the current?....
MCQ->Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

....
MCQ->Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value. Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.

....
MCQ->Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode? It has low saturation current.It has high value of cut in voltage.It can withstand large reverse voltage.When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions. Select the answer using the given below....
MCQ->Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C. Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

....
MCQ->Assertion (A): Silicon is less sensitive to changes in temperature than germanium.Reason (R): Cut in voltage in silicon is less than that in germanium.

....
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution