Assertion (A): Silicon is less sensitive to changes in temperature than germanium.Reason (R): Cut in voltage in silicon is less than that in germanium.p> ?->(Show Answer!)

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1. Assertion (A): Silicon is less sensitive to changes in temperature than germanium.Reason (R): Cut in voltage in silicon is less than that in germanium.

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MCQ->Assertion (A): Silicon is less sensitive to changes in temperature than germanium.Reason (R): Cut in voltage in silicon is less than that in germanium.

MCQ->Assertion (A): Silicon is less sensitive to changes in temperature than germanium. Reason (R): It is more difficult to produce minority carriers in silicon than in germanium.

MCQ->Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

MCQ->Assertion (A): Germanium is more commonly used than silicon. Reason (R): Forbidden gap in germanium is less than that in silicon.

MCQ->Assertion (A): Intrinsic resistivity of silicon is lower than that of germanium.Reason (R): Magnitude of free electron concentration in germanium is more than that of silicon.

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