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1. An n type silicon bar 0.1 cm long and 100 μm2 in cross-sectional area has a majority carrier concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m0/V-s at 300k. If the charge of an electron is 1.6 x 10-19 coulomb, then the resistance of the bar is





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  • By: guest on 02 Jun 2017 12.51 am
    Resistance of bar(R) = l = 0.1 cm, A = 100 x 10-6 m2 σ = neμn + Peμp But bar is of n type then it can be approximated to σ = neμn.
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