Toggle navigation
Home
KPSC Previous Question Papers
Article Category
kerala psc
upsc
General
Popular Pages
Multiple Choice Question in non-verbal-reasoning-grouping-of-images
Multiple Choice Question in aptitude-area
Multiple Choice Question in aptitude-compound-interest
Multiple Choice Question in engineering-mechanics-kinetics-of-a-particle-impulse-and-momentum
Multiple Choice Question in database-database-redesign
Question Answer in malayalam-kerala-psc-questions
Multiple Choice Question in malayalam-kerala-psc-questions
Multiple Choice Question in 035/2016
Multiple Choice Question in current-affairs-2017-03-05
Multiple Choice Question in electronic-devices-bipolar-junction-transistors
Question Answer in Malayalam General Knowledge
Question Answer Bank
Multiple Choice Question Bank
Question Answer Category
Multiple Choice Question Category
Home
->
Multiple Choice Questions
Question Set
electronics and communication engineering electronic devices and circuits
1. In a P type silicon sample, the hole concentration is 2.25 x 1015 / cm3. If the intrinsic carrier concentration is 1.5 x 1010/ cm3 the electron concentration is
(A): 1.5 x 1025/cm3
(B): 1010/cm3
(C): 105/cm3
(D): zero
Previous Question
Show Answer
Next Question
Add Tags
Report Error
Show Marks
Ask Your Doubts Here
Type in
(Press Ctrl+g to toggle between English and the chosen language)
Post reply
Comments
By: guest on 02 Jun 2017 12.52 am
Electron concentration .
Show Similar Question And Answers
QA->What type of printing uses a plastic or rubber carrier?....
QA->A metal plate with a circular hole at the centre is heated. What will happen to the area of the hole?....
QA->A metal sheet with circular hole is heated. what change will be in the hole?....
QA->A large tank having a small hole at the bottom is filled with water to a height h. if the stream of water coming out of the hole is directed vertically upwards it will?....
QA->A metal sheet with a circular hole is heated. The hole will?....
MCQ->In a P type silicon sample, the hole concentration is 2.25 x 1015 / cm3. If the intrinsic carrier concentration is 1.5 x 1010/ cm3 the electron concentration is....
MCQ->Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon....
MCQ->A-P type material has an acceptor ion concentration of 1 x 1016 per cm3. Its intrinsic carrier concentration is 1.48 x 1010/ cm. The hole and electron mobilities are 0.05m2/V-sec and 0.13 m2/V-sec respectively calculate the resistivity of the material....
MCQ->A sample of N-type semiconductor has electron density of 6.25 x 1018/cm3 at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature the hole density works out to be....
MCQ->A sample of N type semiconductor has an electron density of 6.25 x 1018/cm3 at 300 K. If intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature, the hole density is....
×
×
Type The Issue
×
Your Marks
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...
Privacy
|
Terms And Conditions
Question ANSWER With Solution