Toggle navigation
Home
KPSC Previous Question Papers
Article Category
kerala psc
upsc
General
Popular Pages
Multiple Choice Question in aptitude-area
Multiple Choice Question in non-verbal-reasoning-grouping-of-images
Multiple Choice Question in aptitude-compound-interest
Multiple Choice Question in engineering-mechanics-kinetics-of-a-particle-impulse-and-momentum
Multiple Choice Question in database-database-redesign
Multiple Choice Question in 035/2016
Question Answer in malayalam-kerala-psc-questions
Multiple Choice Question in malayalam-kerala-psc-questions
Multiple Choice Question in current-affairs-2017-03-05
Question Answer in KERALA PSC
Multiple Choice Question in KERALA PSC
Multiple Choice Question in electronic-devices-bipolar-junction-transistors
Question Answer Bank
Multiple Choice Question Bank
Question Answer Category
Multiple Choice Question Category
Home
->
Multiple Choice Questions
Question Set
electronics and communication engineering electronic devices and circuits
1. The forbidden energy gap for silicon is
(A): 0.12 eV
(B): 0.72 eV
(C): 1.12 eV
(D): 7.2 eV
Previous Question
Show Answer
Next Question
Add Tags
Report Error
Show Marks
Ask Your Doubts Here
Type in
(Press Ctrl+g to toggle between English and the chosen language)
Post reply
Comments
Show Similar Question And Answers
QA->Forbidden City?....
QA->Who is the author of the controversial book ‘Forbidden Verses’?....
QA->Forbidden, prohibited by law....
QA->Fruit of the forbidden tree given mortal taste ശരിയായ തർജ്ജമ എന്ത്....
QA->Fruit of the forbidden tree given mortal taste ശരിയായ തർജ്ജമ എന്ത്❓....
MCQ->Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices. Reason (R): Forbidden gap in silicon is more than that in germanium. ....
MCQ->Assertion (A): Germanium is more commonly used than silicon. Reason (R): Forbidden gap in germanium is less than that in silicon. ....
MCQ->The forbidden energy gap for silicon is....
MCQ->Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon....
MCQ->As temperature increases the forbidden gap in silicon increases.....
×
×
Type The Issue
×
Your Marks
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...
Privacy
|
Terms And Conditions
Question ANSWER With Solution