59452. If E is electric field intensity, the current density due to field emission is proportional to
59453. When a high voltage reference is required it is advantageous to use two or more zener diodes in series to allow
59454. Assertion (A): When p-n junction is forward biased, steady current flows. Reason (R): When a p-n junction is forward biased, free electrons cross the junction from n to p and holes from p to n.
59455. Pentavalent impurity creates n type semiconductor.
59456. When a BJT is operated under saturated condition
59457. Indium, aluminium, arsenic are all p type impurities.
59458. The principle of working of an optical square is based on
59459. Hall coefficient KH and charge density r are related as
59460. When a diode is forward biased, the diode current is
59461. In p type semiconductors the conduction due to holes ( = σp ) is (where e = charge on hole, μp is hole mobility and p is hole concentration)
59462. At room temperature, the current in the, intrinsic semiconductor is due to
59463. Which of these is also called 'hot carrier diode'?
59464. A d.c. power supply has an open circuit voltage of 100 V. When the full load current is drawn, the output drops to 80 V. The percentage voltage regulation is
59465. The dc output voltage from a power supply
59466. Avalanche beakdown is primarily dependent on the phenomenon of
59467. In an internal focusing type of telescope,the lens provided is
59468. The holes diffuse from P-region to the N-region in a P-N junction diode because
59469. Surface leakage current is a part of
59470. The forbidden energy gap in semiconductors
59471. In commercial electron tubes the current produced by the cathode at 1000 K is about
59472. In a conductor the conduction and valence bands overlap
59473. In which of the following device electrons will be the majority carriers?
59474. An n channel JFET has IDS whose value is
59475. How is an N-channel junction Field Effect Transistor operated as an amplifier?
59476. The Ebers-moll equation for IE in CB configuration is given by
59477. The rise and fall method provides complete check on
59478. The merging of a hole and an electron is called
59479. Which of the following semiconductor has the highest melting point?
59480. The equivalent circuit of an ideal diode is
59481. What is meant by "continuous collector current" in BJT?
59482. To obtain p-type silicon-semiconductor, pure silicon may be doped with?
59483. Assertion (A): The frequency of light used for photoelectric emission is high. Reason (R): As per Einstein's equation 0.5 mv2 < hf - Uw.
59484. The electric breakdown strength is affected by
59485. Gel is
59486. When a P-N junction is unbiased, the junction current at equilibrium is
59487. Dielectric strength of which of the following material has the highest dielectric strength?
59488. Assertion (A): In p type semiconductor conduction is mainly due to holes. Reason (R): In p type material the holes are majority carriers.
59489. In common base configuration, the input characteristics of bipolar junction transistor are drawn between
59490. Fermi level is the maximum energy that an electron can possess at 0 K.
59491. The voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit) is 25 volts. The maximum voltage on the reverse biased diode will be
59492. The residual resistivity of a binary alloy at 0°K is
59493. Which of the following insulating material is restricted to temperatures below 100°C?
59494. - ve feedback in an amplifier
59495. The ratio of impurity atoms to intrinsic semiconductor atoms in an extrinsic semiconductor is about.
59496. To ensure that a zener diode does not get destroyed
59497. SCR turns of from conducting state to blocking state on
59498. The kinetic energy of free electrons in a metal is (where k is the de-Broglie wave number of the electron)
59499. The turn on time of an SCR is 5 micro second. Its trigger pulse should have