59401. For most metals, Fermi level EF is less than
59402. The spins in a ferrimagnetic material are
59403. The permeability of soft iron can be increased by
59404. All of the following elements have three valence electrons EXCEPT
59405. What is the function of silicon dioxide layer in MOSFETS?
59406. The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage
59407. Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature. Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.
59408. Covalent bond energy in Germanium is approximately
59409. Which is correct for a vacuum triode?
59410. The type of bond provided in brick masonry for carrying heavy loads is
59411. Secondary emission results
59412. Ohmic range of carbon composition resistors is
59413. The depletion layer consists of immobile ions.
59414. The output V-I characteristics of an Enhancement type MOSFET has
59415. A sample of N-type semiconductor has electron density of 6.25 x 1018/cm3 at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature the hole density works out to be
59416. Mobility is directly proportional to Hall coefficient.
59417. n channel FETs are better as compared to p-channel FET because
59418. An n channel depletion type MOSFET has
59419. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at
59420. The density of states (i.e. number of states per eV per m3) in the conduction band for energy level E is proportional to
59421. A-P type material has an acceptor ion concentration of 1 x 1016 per cm3. Its intrinsic carrier concentration is 1.48 x 1010/ cm. The hole and electron mobilities are 0.05m2/V-sec and 0.13 m2/V-sec respectively calculate the resistivity of the material
59422. Resistivity is a property of a semiconductor that depends on
59423. Operating point signifies that
59424. The triangular space formed between extra dos and horizontal line drawn through the crown of arch is called
59425. Assertion (A): In n-p-n transistor conduction is mainly due to electrons. Reason (R): In n type materials electrons are majority carriers.
59426. The factor n in the equation for calculating current for a silicon diode is
59427. An LED is
59428. An enhancement mode MOSFET is on when the gate voltage is
59429. For the n-type semiconductor with n = NP and P = , the hole concentration will fall below the intrinsic value because some of the holes
59430. For a junction FET in the pinch off region as the drain voltage is increased, the drain current
59431. To avoid thermal runaway in the design of an analog circuit, the operating point of the BJT should be such that it satisfies the condition.
59432. For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when
59433. The primary function of a clamper circuit is to
59434. Breakdown in dielectric may be
59435. AE 139 is a
59436. The function off an oxide layer in an IC device is to mask against diffusion or ion implantationinsulate the surface electricallyincrease the melting point of Siproduce a chemically stable protective layer
59437. The passage of current in an electrolyte is due to the movement of
59438. In a CE bipolar transistor operating in active region, collector current is independent of
59439. When a normal atom loses an electron
59440. The main purpose of using transformer coupling in a class A amplifier is to make it more
59441. The effective channel length of a MOSFET in saturation decreases with increase in
59442. Which of the following element does not have three valence electrons?
59443. Which of the following is used in the sterilization of water?
59444. Electrons within a metal have energy levels from zero to Fermi level EF.
59445. A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to
59446. Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band. Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.
59447. The drift velocity of electrons and holes is proportional to electric field strength.
59448. In an n channel MOSFET, the substrate is connected
59449. Piezoelectric materials serves as a source of
59450. Which of the following is not a semiconductor?