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13The width of depletion layer of a P.N.junction ?->(Show Answer!)
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1. 13The width of depletion layer of a P.N.junction





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MCQ->13The width of depletion layer of a P.N.junction....
MCQ->Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 μm Depletion width on the p-side = 1.0 μm Intrinsic carrier concentration = 1.4 x 1014F. cm-1. Thermal voltage = 26mV Permittivity of free space = 8.85 x 10-14F. cm-1. Dielectric constant of silicon = 12. The peak electric field in the device is....
MCQ->Assertion (A): A p-n junction has high resistance in reverse direction. Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

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MCQ->A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is....
MCQ->An one sided abrupt junction has 1021/m3 of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10-19 C, εr =16, ε0 = 8.87 x 10-12 F/m) is....
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