Question Set

1. In a reaction, the threshold energy is equal to (where, A = activation energy N = normal energy of reactants)





Ask Your Doubts Here

Type in
(Press Ctrl+g to toggle between English and the chosen language)

Comments

Show Similar Question And Answers
QA->A photo sensitive material would emit electrons, if excited by photons beyond a threshold. To overcome the threshold, one would increase?....
QA->The reaction in which product molecules react and give back the original reactants is called?....
QA->GST threshold limit of Normal States is _________ lakh....
QA->A substance that speeds up a chemical reaction without being consumed itself in the reaction....
QA->Five equal forces of 10 N each are applied at one point and all are lying in one plane. If angles between them are equal, the resultant of these forces wil be?....
MCQ->The rate expression for a heterogenous catalytic reaction is given by, - rA = K.KA PA(1 + KA.PA + KR.PR), where K is surface reaction rate constant and KA and KR are absorption equilibrium constants of A and R respectively. If KR PR >> (1 + KA PA), the apparent activation energy EA is equal to (given E is the activation energy for the reaction and ΔHR and ΔHA are the activation energies of adsorption of R and A)....
MCQ->In a reaction, the threshold energy is equal to (where, A = activation energy N = normal energy of reactants)....
MCQ->Rate constant for a first order reaction does not depend upon reaction time, extent of reaction and the initial concentration of reactants ; but it is a function of reaction temperature. In a chemical reaction, the time required to reduce the concentration of reactant from 100 gm moles/litre to 50 gm moles/litre is same as that required to reduce it from 2 gm moles/litre to 1 gm mole/litre in the same volume. Then the order of this reaction is....
MCQ->The minimum energy required to allow a chemical reaction to proceed is termed as the 'threshold energy '. Chemical reaction with low activation energy are....
MCQ->A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .....
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution