1. A germanium diode is approximated by ________ equivalent for voltages less than 0.3 V.





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MCQ->A germanium diode is approximated by ________ equivalent for voltages less than 0.3 V.....
MCQ->Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

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MCQ->Assertion (A): Silicon is less sensitive to changes in temperature than germanium.Reason (R): Cut in voltage in silicon is less than that in germanium.

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MCQ->Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode? It has low saturation current.It has high value of cut in voltage.It can withstand large reverse voltage.When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions. Select the answer using the given below....
MCQ->Assertion (A): Germanium is more commonly used than silicon. Reason (R): Forbidden gap in germanium is less than that in silicon.

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