<<= Back Next =>>
You Are On Multi Choice Question Bank SET 1014

50701. Calculate the approximate value of the maximum power rating for the transistor represented by the output characteristics of Figure 4.1?





50702. For what value of does the transistor enter the saturation region?





50703. Determine the change in IC from 25ºC to 175ºC for the transistor defined in this table for fixed-bias with RB = 240 k and = 100 due to the S(VBE) stability factor.





50704. Which of the following is (are) related to an emitter-follower configuration?





50705. At what region of operation is the base-emitter junction forward biased and the base-collector junction reverse biased?





50706. You can select the values for the emitter and collector resistors from the information that is provided for this circuit.



50707. In the case of this circuit, you must assume that VE = 0.1·VCC in order to calculate RC and RE.



50708. For an "on" transistor, the voltage VBE should be in the neighborhood of 0.7 V.



50709. In a voltage-divider circuit, which one of the stability factors has the least effect on the device at very high temperature?





50710. Which of the following is (are) a stability factor?





50711. Calculate ICsat.





50712. Calculate the storage time in a transistor switching network if toff is 56 ns, tf = 14 ns, and tr = 20 ns.





50713. Determine ICQ at a temperature of 175º C if ICQ = 2 mA at 25º C for RB / RE = 20 due to the S() stability factor.





50714. Calculate ETh for this network.





50715. Which of the following currents is nearly equal to each other?





50716. Which of the following voltages must have a negative level (value) in any npn bias circuit?





50717. Determine the values of VCB and IB for this circuit.





50718. Use this table to determine the change in IC from 25ºC to 175ºC for RB / RE = 250 due to the S(ICO) stability factor. Assume an emitter-bias configuration.





50719. For the typical transistor amplifier in the active region, VCE is usually about ________ % to ________ % of VCC.




50720. For the BJT to operate in the saturation region, the base-emitter junction must be ________-biased and the base-collector junction must be ________-biased.





50721. The total time required for the transistor to switch from the "off" to the "on" state is designated as ton and defined as the delay time plus the time element.



50722. Calculate Rsat if VCE = 0.3 V.




50723. The ratio of which two currents is represented by ?





50724. Which of the following is assumed in the approximate analysis of a voltage divider circuit?





50725. The God not worshipped during the time of Rig Vedic Aryans was?





50726. Calculate VCE.





50727. Which of the following is (are) the application(s) of a transistor?





50728. It is desirable to design a bias circuit that is independent of the transistor beta.



50729. Blue and white screening used for the selection of recombinant bacteria is based on the principle of alpha complementation of the -----gene





50730. For the dc analysis the network can be isolated from the indicated ac levels by replacing the capacitor with ________.





50731. ________is the least stabilized circuit.





50732. The emitter resistor in an emitter-stabilized bias circuit appears to be ________ in the base circuit.





50733. In a fixed-bias circuit, the slope of the dc load line is controlled by ________.





50734. A change in value of ________ will create a new load line parallel to its previous one in a fixed-bias circuit.





50735. ________is the primary difference between the exact and approximate techniques used in the analysis of a voltage divider circuit.





50736. The dc load line is determined solely by the ________.





50737. For a transistor operating in the saturation region, the collector current IC is at its ________ and the collector-emitter voltage VCE is to the ________.





50738. In a transistor-switching network, the level of the resistance between the collector and emitter is ________ at the saturation and is ________at the cutoff.





50739. A significant increase in leakage current due to increase in temperature creates ________between IB curves.





50740. The saturation current of a transistor used in a fixed-bias circuit is ________ its value used in an emitter-stabilized or voltage-divider bias circuit for the same values of RC.





50741. In a collector feedback bias circuit, the current through the collector resistor is ________ and the collector current is ________.





50742. The Thevenin equivalent network is used in the analysis of the ________ circuit.





50743. The ________the stability factor, the ________sensitive the network is to variations in that parameter.





50744. By definition, quiescent means ________.





50745. As the temperature increases, ________, VBE ________, and ICO ________ in value for every 10ºC.





50746. In any amplifier employing a transistor, the collector current IC is sensitive to ________.





50747. In a fixed-bias circuit, the magnitude of IC is controlled by and therefore is a function of ________.





50748. In a transistor-switching network, the operating point switches from ________ to ________ regions along the load line.





50749. In a fixed-bias circuit with a fixed supply voltage VCC, the selection of a ________ resistor sets the level of ________ current for the operating point.





50750. ________ should be considered in the analysis or design of any electronic amplifiers.





<<= Back Next =>>
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution