48651. The refresh period for capacitors used in DRAMs is ________.
48652. What is the principal advantage of using address multiplexing with DRAM memory?
48653. What is a multitap digital delay line?
48654. The bit capacity of a memory that has 2048 addresses and can store 8 bits at each address is ________.
48655. How many 8 k × 1 RAMs are required to achieve a memory with a word capacity of 8 k and a word length of eight bits?
48656. The self help made effective by originates is called:
48657. Which of the following is not a flash memory mode or operation?
48658. For the given circuit, what is the bit length of the output data word?
48659. The smallest unit of binary data is the ________.
48660. Select the statement that best describes the fusible-link PROM.
48661. How can UV erasable PROMs be recognized?
48662. What part of a Flash memory architecture manages all chip functions?
48663. An 8-bit address code can select ________.
48664. Eight bits of digital data are normally referred to as a:
48665. Which is not a hard disk performance parameter?
48666. The ideal memory ________.
48667. To which pin on the RAM chip does the address decoder connect in order to signal which memory chip is being accessed?
48668. EEPROM stands for ________.
48669. L1 is known as ________.
48670. Describe the timing diagram of a write operation.
48671. What is the bit storage capacity of a ROM with a 1024 × 8 organization?
48672. Which of the following is one of the basic characteristics of DRAMs?
48673. The main advantage of semiconductor RAM is its ability to:
48674. Which of the following describes the action of storing a bit of data in a mask ROM?
48675. Address decoding for dynamic memory chip control may also be used for:
48676. Static memory will maintain storage even if power is removed.
48677. Static RAMs (SRAMs) use internal capacitors as basic storage elements.
48678. A burst refresh and a normal memory operation of a DRAM can be interspersed.
48679. ROMs are used to store data that generally cannot be easily changed.
48680. RAM stands for Readily Accessible Memory.
48681. If a memory design allows a storage location to be accessed without first sequencing through other locations, it is called Random Access Memory.
48682. An optical disk is an example of magnetic storage.
48683. The address-decoding scheme for a 16K-byte EPROM memory system requires a 1-to-8-address decoder when 4K × 8 memory is used.
48684. The time from the beginning of a read cycle to the point when the data output is valid is called propagation delay.
48685. Due to their ability to be easily erased and reused, magnetic memory devices are widely used for RAM.
48686. The TMS44100 4M × 1 DRAM does not have a chip select (SC) input.
48687. The highest-speed magnetic storage is achieved by using a floppy disk.
48688. The floating-gate MOSFET is the actual storage element for EEPROMs. An electron charge will remain on the floating gate for more than 10 years unless drained off electrically.
48689. ROMs are used to store data on a permanent basis.
48690. The time delay called access time, tac, is a measure of the ROM's operating speed.
48691. A typical RAM will read (place stored data on its outputs) whenever the Chip Select line is active and the Write Enable line is inactive.
48692. A group of 6 bits is also known as 1 byte.
48693. Erasing or programming a flash memory device is a one-step operation.
48694. EEPROM and Flash memory are electrically erasable.
48695. RAMs must have a input, in addition to data in.
48696. The EPROM is strictly a MOS device.
48697. A term often used commercially to refer to read/write memory is sequential-access memory.
48698. DRAM chips can be combined for larger capacity and word sizes using the same methods as for other memory types.
48699. More than one bit of data can occupy each memory cell.
48700. Flash memories are frequently used in place of floppy or small-capacity hard disk drives in portable computers.