1. Calculate the conductivity of pure silicon at room temperature when the concentration of carriers is 1.6 x 1010 per cm3. Take μe = 1500 cm2/V-sec, μh = 500 cm2/V-sec at room temperature,





Ask Your Doubts Here

Type in
(Press Ctrl+g to toggle between English and the chosen language)

Comments

  • By: guest on 01 Jun 2017 11.43 pm
    σi = (μe + μn) . e . ni .
Show Similar Question And Answers
QA->The process by which water diffuses through a semi-permeable membrane from a region of higher concentration of a solution to a region of lower concentration of a solution?....
QA->The movement of particles or molecules of a substance from the region of higher concentration to a region of lower concentration is called ........?....
QA->Osmosis is the flow of solution from higher concentration to a solution of lower concentration through a semi permeable membrane. What is incorrect in this statement?....
QA->As per the revised Goods and Services Tax (GST) norms, the GST on Haj and Kailash Mansarovar Yatra has been reduced from 18 per cent to how much per cent?....
QA->Pure water is a bad conductor of electricity because pure water does not dissociate into?....
MCQ->Calculate the conductivity of pure silicon at room temperature when the concentration of carriers is 1.6 x 1010 per cm3. Take μe = 1500 cm2/V-sec, μh = 500 cm2/V-sec at room temperature,....
MCQ->Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon....
MCQ->In a P type silicon sample, the hole concentration is 2.25 x 1015 / cm3. If the intrinsic carrier concentration is 1.5 x 1010/ cm3 the electron concentration is....
MCQ->Which of the following is not a dimension-less group used in catalysis ? (where, D = dispersion co-efficient, cm2 /sec.D1 = diffusion co-efficient; cm2/sec L = length of the reactor, cm t = time, sec, v = volumetric flow rate, cm3/sec . V = volume, cm3.)....
MCQ->A-P type material has an acceptor ion concentration of 1 x 1016 per cm3. Its intrinsic carrier concentration is 1.48 x 1010/ cm. The hole and electron mobilities are 0.05m2/V-sec and 0.13 m2/V-sec respectively calculate the resistivity of the material....
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution