1. A silicon sample A is doped with 1018 Atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is





Ask Your Doubts Here

Type in
(Press Ctrl+g to toggle between English and the chosen language)

Comments

Show Similar Question And Answers
QA->The ratio of bases of a cylinder and a cone are in the ratio 3: Volume of cylinder and cone are in the ratio 9: then their heights are in the ratio?....
QA->The ratio between the radius of the base and the height of a cylinder is 2 : If its volume is 1617 cm3, the total surface area of the cylinder is—....
QA->A metal plate with a circular hole at the centre is heated. What will happen to the area of the hole?....
QA->A metal sheet with circular hole is heated. what change will be in the hole?....
QA->A large tank having a small hole at the bottom is filled with water to a height h. if the stream of water coming out of the hole is directed vertically upwards it will?....
MCQ->A silicon sample A is doped with 1018 Atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is....
MCQ->Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon....
MCQ->An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity Δσ obeys which relation? [ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess electron (hole) density ].....
MCQ->The current density J, free electron mobility μn, hole mobility μp , magnitude of free electron and hole concentration ni electric field E and charge on electron e, in intrinsic semiconductor are related as....
MCQ->A sample of N-type semiconductor has electron density of 6.25 x 1018/cm3 at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature the hole density works out to be....
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use | Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions
Question ANSWER With Solution