59551. The output, V-I characteristics of an Enhancement type MOSFET has
59552. Piezoelectric quartz crystal resonators find application where
59553. The forbidden energy gap between the valence band and conduction band will be least in case of
59554. If too large current passes through the diode
59555. Figure shows the terminals of a transistor in plastic package TO 18. Then
59556. The network shown in the figure represents a
59557. In a bipolar transistor, the emitter base junction has
59558. Which of these has semi-conductor metal junction?
59559. The ripple factor of power supply is a measure of
59560. Assertion (A): When light falls at junction of p-n photodiode, its p side becomes positive and n side becomes negative. Reason (R): When a photodiode is short circuited, the current in the external circuit flows from p side to n side.
59561. In what condition does BJT act like an open switch
59562. Manometer is used to measure
59563. A power supply has full-load voltage of 20 V. What will be its no load voltage when its voltage regulation is 100%
59564. For a photo conductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in the intensities of optical illumination results in
59565. Holes act like
59566. Assertion (A): Silicon is less sensitive to changes in temperature than germanium. Reason (R): It is more difficult to produce minority carriers in silicon than in germanium.
59567. The number of protons in a silicon atom is
59568. The emitter follower is widely used in electronic instrument because
59569. 1 atmospheric pressure is equivalent to
59570. An amplifier with resistive -ve feedback has two left poles in its open loop transfer function. The amplifier
59571. Amplification of ultrasonic waves is possible in a piezoelectric semiconductor under applied electric field. The basic phenomenon involved is known as
59572. For a junction FET in the pinch off region, as the drain voltage is increased, the drain current
59573. For a BJT, under the saturation region.
59574. In which mode of BJT operation are both junctions reverse biased?
59575. The greatest invention of man in palaeolithic age was?
59576. Ferrities are particularly suited for high frequency applications because of their
59577. In intrinsic semiconductor, the fermi level
59578. Electromagnetic waves transport
59579. In a forward biased p-n junction current enters p material as hole current and leaves n material as electron current of the same magnitude.
59580. When P-N junction is in forward bias, by increasing the battery voltage
59581. A semiconductor in its purest form called
59582. Which of the following is an active device?
59583. Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current. Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage.
59584. If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.
59585. Multi-national means:?
59586. In LED the radiation is in
59587. The rate of change of excess carrier density is proportional to carrier density.
59588. Half turn stair change their direction through
59589. The main reason why Ni-Zn ferrites are used for audio and T.V. transformers is that
59590. Assertion (A): Intrinsic semiconductor is an insulator at 0 K. Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy band.
59591. Typical values of h parameters at about 1 mA collector current for small signal audio amplifier in CE configuration are :
59592. A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of
59593. Dynamic resistance of diode is
59594. The presence of some holes in an intrinsic semiconductor at room temperature is due to
59595. Voltage series feedback (Also called series-shunt feedback) results in
59596. How many free electrons does a p type semiconductor has?
59597. Which of the following has highest resistivity?
59598. Assertion (A): In p-n-p transistor collector current is termed negative. Reason (R): In p-n-p transistor holes are majority carriers.
59599. The sensitivity of human eyes is maximum at
59600. In a bipolar transistor, the base collector junction has