electronic-devices-field-effect-transistors Related Question Answers
2. What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate with?
3. Midpoint bias for a D-MOSFET is ID = ________, obtained by setting VGS = 0.
4. On the drain characteristic curve of a JFET for VGS = 0, the pinch-off voltage is
6. Which of the following devices has the highest input resistance?
7. The value of VGS that makes ID approximately zero is the
8. The JFET is always operated with the gate-source pn junction ________ -biased.
12. A dual-gated MOSFET is
14. What three areas are the drain characteristics of a JFET (VGS = 0) divided into?
15. In a self-biased JFET circuit, if VD = VDD then ID = ________.
17. High input resistance for a JFET is due to
18. For a JFET, the change in drain current for a given change in gate-to-source voltage, with the drain-to-source voltage constant, is
21. A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V.
22. A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V.
24. If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n)
25. When biased as a variable resistor, JFET resistance (RDS) increases as VGS becomes more negative.
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