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You Are On Multi Choice Question Bank SET 1185

59251. The atomic weight of an atom is determined by





59252. The minimum charge carried by an ion is





59253. In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about





59254. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that





59255. A long specimen of P type semiconductor material





59256. For BJT, under saturation condition





59257. An inductor filter has a ripple that __________ with load resistance and consequently is used only with relatively __________ load currents.





59258. For a given velocity of a projectile,the range is maximum when the angle of projection is





59259. Introducing a resistor in the emitter of a common amplifier stabilizes the d.c. operating point against variations in





59260. Consider the following statement S1 and S2. S1: The β of a bipolar transistor reduces if the base width is increased. S2: the β of a bipolar transistor increases if the doping concentration in the base is increased. Which one of the following is correct?





59261. Assertion (A): A BJT can be used as a switch. Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.





59262. The concentration of minority carriers in an extrinsic semiconductor under equilibrium is





59263. The mean life time of the minority carriers is in the range of a few





59264. Choose the correct match for input resistance of various amplifier configurations shown below configuration. CB : Common Base LO : LowCC : Common Collector  MO : moderateCE : Common EmitterHI: High





59265. The resistivity of a semiconductor





59266. The voltage at which Avalanche occurs is known as





59267. If the energy gap of a semiconductor is 1.1 eV, then it would be





59268. In intrinsic semiconductor the increase in conductivity per degree increase in temperature is about





59269. The ripple factor for a bridge rectifier is





59270. Which of the following semi-conductor has forbidden energy gap less 1 eV?





59271. In the vacuum diode equation ib = keb1.5, the current is





59272. Higher pitch of roof





59273. Which of these is used in seven segment display?





59274. The current in a p-n junction diode with V volts applied in p region relative to n region (where I0 is reverse saturation current, m is ideality factor, k is Boltzmann's constant, T is absolute temp and q is charge on electron) is





59275. In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will





59276. In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be





59277. Consider the following statements. The functions of an oxide layer in an IC device is to mask against diffusion or ion implantinsulate the surface electricallyincrease the melting point of siliconproduce a chemically stable protective layer of these statements.





59278. The forbidden energy gap for germanium is





59279. If the gate of JFET is reverse biased, the width of depletion region





59280. If the atomic number of germanium is 32, the number of electrons in the outer most shell will be





59281. Dielectric loss due to polarisation occurs in





59282. A metal loses electrons at room temperature.



59283. Figure shows small signal common base transistor circuit.The current source I and resistor R on the output side are





59284. Consider the following statement associated with bipolar junction transistor and JFET The former has higher input impedance than the laterThe former has higher frequency stability than the laterThe later has lower noise figure than the formerThe later has higher power rating than the former. Of these statements





59285. The turn off time of a bipolar transistor is about





59286. Hystresis loss least depends on





59287. In a bipolar transistor, emitter efficiency is about





59288. For signal diodes the PIV rating is usually in the range





59289. The potential of suppressor grid (with respect to cathode) is usually





59290. In n type semiconductor, the free electron concentration





59291. If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in





59292. Which of the following can be operated with positive as well as negative gate voltage?





59293. The reverse breakdown voltage of a diode depends on the extent of doping.



59294. The correct answer is





59295. At a P-N junction, the potential barrier is due to the charges on either side of the junction, which consists of





59296. In a vacuum triode μ = rpgm.



59297. The material which has zero temperature coefficient of resistance is





59298. When the light falling on a photodiode increases, the reverse minority current





59299. When a ferromagnetic substance is magnetised, small changes in dimensions occur. Such a phenomenon is known as





59300. As the temperature of an intrinsic semiconductor material is increased





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