58901. An one sided abrupt junction has 1021/m3 of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10-19 C, εr =16, ε0 = 8.87 x 10-12 F/m) is
58902. n-type semiconductors
58903. In all metals
58904. The voltage across a zener diode
58905. Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response. Reason (R): The electron mobility is higher than hole mobility.
58906. The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of
58907. Which of these has degenerate p and n materials?
58908. A Schottky diode clamp is used along with switching BJT for
58909. From the given circuit below, we can conclude that.
58910. In a piezoelectric crystal, applications of a mechanical stress would produce
58911. In which of the following is the width of junction barrier very small?
58912. If the reverse voltage across a p-n junction is increased three times, the junction capacitance
58913. Which of these has highly doped p and n region?
58914. Measurement of Hall coefficient enables the determination of
58915. The units for transconductance are
58916. The amount of photoelectric emission current depends on the frequency of incident light.
58917. When a p-n junction is forward biased
58918. The carriers of n channel JFET are
58919. The depletion layer around p-n junction in JFET consists of
58920. Junction temperature is always the same as room temperature.
58921. The mean free path of conduction electrons in copper is about 4 x 10-8 m. For a copper block, find the electric field which can give, on an average, 1 eV energy to a conduction electron
58922. When a p-n-p transistor is properly biased to operate in active region the holes from emitter.
58923. Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices. Reason (R): Forbidden gap in silicon is more than that in germanium.
58924. Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode. Reason (R): When a diode is reverse biased surface leakage current flows.
58925. At room temperature a semiconductor material is
58926. The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs → versus
58927. In an n channel JFET
58928. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 1016/m3. If after doping, the number of majority carriers is 5 x 1020/m3. The minority carrier density is
58929. A diode is operating in forward region and the forward voltage and current are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt (mA). The average power dissipated is
58930. Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10-8 amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.
58931. For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about
58932. The concentration of minority carriers in a semiconductor depends mainly on
58933. Which of the following has highest conductivity?
58934. In a bipolar junction transistor the base region is made very thin so that
58935. Compared to bipolar junction transistor, a JFET has
58936. The drain characteristics of JFET in operating region, are
58937. As temperature increases
58938. When a reverse bias is applied to a p-n junction, the width of depletion layer.
58939. The Hall constant in Si bar is given by 5 x 103 cm3/ coulomb, the hole concentration in the bar is given by
58940. Which of the following devices has a silicon dioxide layer?
58941. Which statement is false as regards holes
58942. Photo electric emission can occur only if
58943. The reverse saturation current of a diode does not depend on temperature.
58944. In a piezoelectric crystal, application of a mechanical stress would produce
58945. The value of a in a transistor
58946. Which of these has 3 layers?
58947. As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by the equation
58948. For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10-3A/V2, VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV.
58949. The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same temperature and at 2 MHz, the skin depth would be approximately
58950. When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.